Part Number Hot Search : 
5318S21 C00RP E3634S 102MH TIP10008 NST18 ICS91 3323W500
Product Description
Full Text Search
 

To Download MJ15015 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  savantic semiconductor product specification silicon npn power transistors MJ15015 description with to-3 package complement to type mj15016 excellent safe operating area applications for high power audio ,stepping motor and other linear applications relay or solenoid drviers dc-dc converters inverters pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i b base current 7 a p c collector power dissipation t c =25 180 w t j junction temperature 150  t stg storage temperature -65~200  thermal characteristics symbol parameter max unit r t h j-c thermal resistance junction to case 0.98 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors MJ15015 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 120 v v ce ( sat) -1 collector-emitter saturation voltage i c =4a; i b =0.4a 1.1 v v ce (sat) -2 collector-emitter saturation voltage i c =10a; i b =3.3a 3.0 v v ce (sat) -3 collector-emitter saturation voltage i c =15a; i b =7.0a 5.0 v v be base-emitter on voltage i c =4a ; v ce =4v 1.8 v i ceo collector cut-off current v ce =60v; v be( off ) =0 0.1 ma i cev collector cut-off current v ce =rated value; v be( off ) =1.5v t c =150 1.0 6.0 ma i ebo emitter cut-off current v eb =7v; i c =0 0.2 ma h fe-1 dc current gain i c =4a ; v ce =2v 10 70 h fe-2 dc current gain i c =4a ; v ce =4v 20 70 h fe-3 dc current gain i c =10a ; v ce =4v 5 i s/b second breakdown collector current with base forward biased v ce =60vdc,t=0.5 s, nonrepetitive 3.0 a c ob output capacitance i e =0 ; v cb =10v;f=1.0mhz 60 600 pf f t transition frequency i c =1a ; v ce =4v;f=1.0mhz 0.8 mhz
savantic semiconductor product specification 3 silicon npn power transistors MJ15015 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)
savantic semiconductor product specification 4 silicon npn power transistors MJ15015


▲Up To Search▲   

 
Price & Availability of MJ15015

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X